Items | Spec | Notes |
|---|---|---|
Barrier layer thickness (nm) | 15 - 20nm ± 2nm | XRD / 3 poins |
C. V. <3% (<2% [target]) | ||
Barrier layer AI composition | 0.2 - 0.3 ± 0.02 | XRD / 3 poins |
C. V. <3% (<2% [target]) | ||
Total epi thickness (nm) | Ave designed ± 10% | Optical interferometer /5 points |
TTV ≦±10% (≦ 5% [target]) | ||
C. V. <3% (<2% [target]) | ||
Sheet resistivity (ohm/sq.) | Ave 350 ± 20 | Non-destructive reference |
C. V. <2% (<1.5% [target]) | ||
Wafer Bowing (um) | Bow ≦ 40(um) | Flantess tester, E/E: 5MM |
Surface defect density | ≦ 1E19 cm-2 | AFM/center/one wafer per one batch |
Items | Typical Standard |
|---|---|
Sheet resistance(*1) (Eddy current) | Average~350±10% ohm/sq. |
Electron mobility(*2) (Eddy current) | ~2.1x103cm2/Vs |
Sheet carrier density Calculated from (*1) and (*2) | 7x1012~1x1013cm-2 |
XRD-FWHM (0002) | ~300 arcsec |
XRD-FWHM (10-12) | ~700 arcsec |
Barrier spec.: AlxGa1-xN Barrier: x=0.2-0.3, thickness = 15-25nm
1) Barrier spec. (thickness and Al composition) can be tuned.
2) AlN spacer can be inserted.
3) Actual 2DEG characteristics will be vried depending on Al spec. Please note the 2DEG value as reference.
Material | SiC |
|---|---|
Poly-type | 4H |
Orientation | (0001) just±0.250 |
Wafer diameter | 150±0.25mm |
Thickness | 500±25um |
Orientation flat | <11-20>±50 |
Length | 47.5±1.5mm |
Surface finishing | Si-face, CMP polish, C-face optical polish |
Resistivity | >1x105 Ωcm |
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