The NDA0150050DC2 is a high power GaN on Silicon HEMT D-mode transistor suitable for DC - 2.7GHz frequency operation. The device supports both CW and pulsed operation with peak output power levels to 15W (41.8dBm) in a plastic package.
The NDA0150050DC2 is ideally suited for a multitude of applications including military radio communications, digital cellular infrastructure, RF energy, avionics, test instrumentation and RADAR.
Note: Performance in MACOM Evaluation Test Fixture, 50Ω system
Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
Small Signal Gain | Pulsed4 , 2.5 GHz | GSS | - | 17.6 | - | dB |
Power Gain | Pulsed4 , 2.5 GHz, 2.5 dB Gain Compression | GSAT | - | 15.3 | - | dB |
Saturated Drain Efficiency | Pulsed4 , 2.5 GHz, 2.5 dB Gain Compression | ηSAT | - | 60 | - | % |
Saturated Output Power | Pulsed4 , 2.5 GHz, 2.5 dB Gain Compression | PSAT | - | 44 | - | dBm |
Gain Variation (-25℃ to +85℃) | Pulsed4 2.5 GHz | ∆G | - | 0.02 | - | dB/℃ |
Power Variation (-25℃ to +85℃) | Pulsed4 2.5 GHz | ∆P2.5dB | - | 0.012 | - | dB/℃ |
Gain | Pulsed4, 2.5 GHz, POUT = 42.8 dBm | GP | - | 17.2 | - | dB |
Drain Efficiency | Pulsed4, 2.5 GHz, POUT = 42.8 dBm | η | - | 52 | - | % |
Ruggedness: Output Mismatch | All phase angles | ψ | VSWR = 10:1, No Device Damage | |||
Note: Performance in MACOM Production Test Fixture, 50Ω system
Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
Power Gain | Pulsed4 , 2.5 GHz, 2.5 dB Gain | GSAT | 10.5 | 13.2 | - | dB |
Saturated Drain Efficiency | Pulsed4 , 2.5 GHz, 2.5 dB Gain | ηSAT | 53 | 59.6 | - | % |
Saturated Output Power | Pulsed4 , 2.5 GHz, 2.5 dB Gain | PSAT | 42.9 | 44.0 | - | dBm |
Gain | Pulsed4 , 2.5 GHz, PIN = 27.5 dBm | GP | 12.4 | 15.0 | - | dB |
Drain Efficiency | Pulsed4 , 2.5 GHz, PIN = 27.5 dBm | η | 42.5 | 49.0 | - | % |
4. Pulse details: 100µs pulse width, 1 ms period, 10% Duty Cycle.
Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
Drain-Source Leakage Current | VGS = -8 V, VDS = 130 V | IDLK | - | - | 3.3 | mA |
Gate-Source Leakage Current | VGS = -8 V, VDS = 0 V | IGLK | - | - | 3.3 | mA |
Gate Threshold Voltage | VDS = 50 V, ID = 3.3 mA | VT | - | -2.0 | - | V |
Gate Quiescent Voltage | VDS = 50 V, ID = 60 mA | VGSQ | -2.4 | -1.8 | -1.4 | V |
On Resistance | VGS = 2 V, ID = 23.1 mA | RON | - | 1.5 | - | Ω |
Maximum Drain Current | VDS = 7 V pulsed, pulse width 300 µs | ID, MAX | - | 1.93 | - | A |
Parameter | Absolute Maximum |
|---|---|
Drain Source Voltage, VDS | 130 V |
Gate Source Voltage, VGS | -10 to 3 V |
Gate Current, IG | 10 mA |
Storage Temperature Range | -65°C to +150°C |
Case Operating Temperature Range | -40°C to +85°C |
Channel Operating Temperature Range, TCH | -40°C to +225°C |
Absolute Maximum Channel Temperature | +250°C |
5. Exceeding any one or combination of these limits may cause permanent damage to this device.
6. MACOM does not recommend sustained operation above maximum operating conditions.
7. Operating at drain source voltage VDS < 55 V will ensure MTTF > 1 x 107 hours.
8. Operating at nominal conditions with TCH ≤ 225°C will ensure MTTF > 1 x 107 hours.
9. MTTF may be estimated by the expression MTTF (hours) = A e [B + C/(T+273)] where T is the channel temperature in degrees Celsius, A = 3.686, B = -35.00, and C = 25,416.
Parameter | Test Conditions | Symbol | Typical | Units |
|---|---|---|---|---|
Thermal Resistance using Finite Element Analysis | VDS = 50 V, PD = 13 W, TCASE = 85°C, TCH = 225°C | RΘ (FEA) | 7.7 | ℃/W |
Thermal Resistance using Infrared Measurement of Die Surface Temperature | VDS = 50 V, PD = 13.5 W, TCASE = 85°C, TCH = 225°C | RΘ (IR) | 8.9 | ℃/W |
10. Case temperature measured using thermocouple embedded in heat-sink. Contact local applications support team for more details on this measurement.
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