Symbol | Parameter | Limited Value | Units | |
---|---|---|---|---|
IDM | Continuous drain current @TC=25°C | 115 | A | |
Continuous drain current @TC=100°C | 76 | A | ||
IDM | Pulsed drain current @TC=25°C (pulse width: 10us) | 250 | A | |
VDSS | Drain to source voltage (TJ = -55°C to 150°C) | 1200 | V | |
VGSS | Gate to source voltage | -4/+18 | V | |
PD | Maximum power Dissipation @TC = 25°C | 446 | W | |
TC | Operating Temperature | Case | -55 to +175 | ℃ |
TJ | Junction | -55 to +175 | ℃ | |
TS | Storage Temperature | -55 to +175 | ℃ | |
TSOLD | Soldering Peak Temperature | 260 | ℃ | |
Md | Mounting Torque 1 @M3 or 6-32 screw | 1 | Nm | |
8.8 | lbf-in |
Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V
Note (2): MOSFET can also safely operate at 0/+15 V
Symbol | Parameter | Typical | Units |
---|---|---|---|
RθJC | Junction-to-Case | 0.27 | °C/W |
RθJA | Junction-to-Ambient | 40 | °C/W |
Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
---|---|---|---|---|---|---|
Forward Device Characteristics | ||||||
BVDSS | Drain-Source Breakdown Voltage | VGS = 0 V,IDSS = 100μA | 1200 | - | - | V |
VGS(th) | Gate Threshold Voltage | VGS = VDS, ID = 23mA | 1.8 | 2.6 | 3.6 | V |
VDS=VGS, ID=23mA, TJ=175°C | - | 2.0 | - | V | ||
RDS(ona) | Drain-Source On-State Resistance | VGS=18V, ID=75A, TJ=25°C | 11 | 16 | 21 | mΩ |
VGS=18V, ID=75A, TJ=175°C | - | 28.8 | 50 | |||
IDSS | Zero Gate Voltage Drain Current | VDS=1200V, VGS=0V, TJ=25°C | - | 1 | 250 | μA |
IGSS | Gate-Source Leakage Current | VGS=22V | - | 10 | - | nA |
gfs | Transconductance | VDS= 20 V, IDS= 75 A | - | 53 | - | S |
VDS= 20 V, IDS= 75 A, T==175°C | - | 47 | - | |||
CISS | Input Capacitance | VGS=0V, VDS=1000V, f=100KHz, VAC=25mV | - | 4300 | - | pF |
COSS | Input Capacitance | - | 236 | - | pF | |
CRSS | Reverse Transfer Capacitance | - | 35 | - | pF | |
EOSS | COSS Stored Energy | - | 135 | - | μJ | |
EON | Turn-On Switching Energy (SiC Diode FWD) | VDS= 800V, VGS = -4 V/+15 V, ID = 75 A, RG(ext) = 5Ω, L= 65.7 μH, TJ= 175ºC | 4,64 | mJ | ||
EOFF | Turn Off Switching Energy (SiC Diode FWD) | - | 2.93 | - | ||
EON | Turn-On Switching Energy (Body Diode FWD) | VDS = 800V, VGS = -4V/+15V, ID =75 A, RG(ext) = 5Ω, L= 65.7 μH, TJ= 175ºC | 7.79 | mJ | ||
EOFF | Turn Off Switching Energy (Body Diode FWD) | 2.95 | ||||
QG | Total Gate Charge | VDS=800V, VGS=-4V to 8V, ID=20A | - | 206 | - | nC |
QGS | Gate to Source Charge | - | 60 | - | ||
QGD | Gate to Drain Charge | - | 44 | - | ||
tD(on) | Turn-On Delay Time | VDS=800V, VGS=-4V to 15 V, RG(ext) = 5 Ω, ID = 75 A, L= 65.7 μH Timing relative to VDS, Inductive load | - | 174 | - | nS |
tR | Rise Time | - | 28 | - | ||
tD(off) | Turn-Off Delay Time | - | 84 | - | ||
tF | Fall Time | - | 27 | - |
a. Dynamic on-resistance; see Fig. 18 and 19 for test circuit and conditions
Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
---|---|---|---|---|---|---|
Forward Device Characteristics | ||||||
VSD | Diode Forward Voltage | VGS=-4V, IS=37.5A, TJ=25°C | - | 3.9 | - | V |
VGS=-4V, IS=37.5A, TJ=175°C | - | 3.6 | - | |||
IS | Continuous Diode Forward Current | VGS = -4 V, TC = 25˚C | 112 | A | ||
IS, pulse | Diode pulse Current | VGS = -4 V, pulse width tP limited by Tjmax | 250 | A | ||
tRR | Reverse Recover time | IS=75A, VGS=-4V, di/dt=1000A/μs, VDD=400V, TJ=175°C | - | 96 | - | ns |
QRR | Reverse Recovery Charge | 604 | nC | |||
Irrm | Peak Reverse Recovery Current | 15 | ||||
tRR | Reverse Recover time | IS=75A, VGS=-4V, di/dt=1000A/μs, VDD=400V, TJ=175°C | 54 | |||
QRR | Reverse Recovery Charge | 630 | ||||
Irrm | Peak Reverse Recovery Current | 19 |