I_D

Continuous drain current @T_C=25°C

23

A

Continuous drain current @T_C=100°C

15

A

I_DM

Pulsed drain current @T_C=25°C (pulse width: 10us)

82

A

Pulsed drain current @T_C=150°C (pulse width: 10us)

62

A

V_DSS

Drain to source voltage (T_J = -55°C to 150°C)

650

V

V_GSS

Gate to source voltage

±20

V

P_D

Maximum power dissipation @T_C=25°C

100

W

T_C

Operating temperature

Case

-55 to 150

°C

T_J

Junction

-55 to 150

°C

T_S

Storage temperature

-55 to 150

°C

T_CSOLD

Soldering peak temperature

260

°C

R_θJC

Junction-to-Case

1.25

°C/W

R_θJA

Junction-to-Ambient

50

°C/W

Forward Device Characteristics

V_DSS -MAX

650

-

-

V

V_GS=0V

B_VDSS

-

1700

-

V

V_GS=0V, I_DSS=250μA

V_GS(th)

-

1.82

-

V

V_DS=VGS, I_D=500μA

R_DS(on)¹

-

125

150

mΩ

V_GS=8V, I_D=4A, T_J=25°C

-

250

-

V_GS=8V, I_D=4A, T_J=150°C

I_DSS

-

8

20

μA

V_DS=700V, V_GS=0V, T_J =25°C

-

70

-

μA

V_DS=700V, V_GS=0V, T_J =150°C

I_GSS

-

-

150

nA

V_GS=20V

-

-

- 150

nA

V_GS=-20V

C_ISS

-

500

-

pF

V_GS=0V, V_DS=650V, f=1MHz

C_OSS

-

50

-

pF

C_RSS

-

4

-

pF

C_O(er)

-

60

-

pF

V_GS=0V, V_DS=0 to 650V

C_O(tr)

-

100

-

pF

Q_G

-

12.5

-

nC

V_DS=400V, V_GS=0V to 8V, I_D=10A

Q_GS

-

3.7

-

Q_GD

-

2.2

-

t_D(on)

-

16

-

nS

V_DS=400V, V_GS=0V to 12V, I_D=10A, R_G=20Ω

t_R

-

10

-

t_D(off)

-

52

-

t_F

-

10

-

Reverse Device Characteristics

V_SD

-

1.3

-

V

V_GS=0V, I_S=5A, T_J=25°C

-

1.9

-

V_GS=0V, I_S=10A, T_J =25°C

-

3

-

V_GS=0V, I_S=10A, T_J =150°C

t_RR

-

12

-

ns

I_S=10A, V_GS=0V, di/dt=1000A/us, V_DD=400V

Q_RR

-

38

-

nC