GaN HEMT Device-器件-透镜光纤,氮化镓外延片,第三代半导体材料-武汉市联映科技有限公司

Symbol	Parameter		Limited Value	Units
V_DSS	Drain to Source Voltage		650	V
V_(TR)DSS	Transient Vrain to Source Voltage 1		800	V
V_GSS	Gate to Source Voltage		± 20	V
P_D	Maximum power Dissipation @T_C = 25°C		38	W
I_D	Continuous Drain Current	T_C = 25°C	9	A
I_D	Continuous Drain Current	T_C = 100°C	6	A
I_DM	Pulse Drain Current	Pulse Width = 10 hs	31	A
T_C	Operating Temperature	Case	-55 to +150	℃
TJ	Operating Temperature	Junction	-55 to +150	℃
T_S	Storage Temperature		-55 to +150	℃
T_SOLD	Soldering Peak Temperature 2		260	℃

Notes:
1. In off-state, spike duty cycle D<0.01, spike duration <20hs
2. Relow MSL3

Symbol	Parameter	Typical	Units
R_θJC	Thermal Resistance, Junction-to-Case	3.3	°C/W
R_θJA	Thermal Resistance, Junction-to-Ambient 3	50	°C/W

Notes: 3. Device on one layer epoxy PCB for drain connection (vertical and without air stream cooling, with 6cm² copper area and 70hm thickness)

Symbol	Parameter	Test Conditions	Min	Typ	Max	Units
Forward Device Characteristics
V_(BL)DSS	Reverse Breakdown Voltage	V_GS= 0 V	650			V
V_GS(th)	Gate Threshold Voltage	V_GS = V_DS, I_D = 500pA	1	1.6	2.5	V
R_DS(on)eff	On Resistance	V_GS= 8 V, I_D = 4 A		245	300	mΩ
R_DS(on)eff	On Resistance	V_GS = 8 V, I_D = 4 A, T_J = 150°C		500		mΩ
I_DSS	Reverse Leakage Current	V_GS = 0 V, V_DS = 650 V		10	20	A
I_DSS	Reverse Leakage Current	V_GS = 0 V, V_DS = 650 V, T_J =150°C		50		A
I_GSS	Gate-to-source Leakage Current	V_GS = 20 V			150	nA
I_GSS	Gate-to-source Leakage Current	V_GS = -20 V			-150	nA
C_ISS	lnput Capacitance	V_GS = 0 V, V_DS = 650 V, f=1MHz		500		pF
C_OSS	Output Capacitance			20		pF
C_RSS	Transfer Capacitance			2		pF
C_o(er)	Output Capacitance,energy related	V_GS = 0 V, V_DS = 0~650 V		25		pF
C_o(tr)	Output Capacitance,time related	V_GS = 0 V, V_DS = 0~650 V		45		pF
Q_G	Total Gate Charge	V_GS = 0~12 V, V_DS = 400 V , I_D = 5.5 A		22		nC
Q_GS	Gate-source Charge			3
Q_GD	Gate-drain Charge			3.5
Q_OSS	Output Charge	V_GS= 0 V, V_DS = 0~650 V		32		nC
t_don	Turn-on Delay	V_GS = 0~12 V, V_DS = 400 V, I_D= 3 A, R_g = 30 Q		20		ns
t_r	Rise Time			7
t_doff	Turn-off Delay			80
t_f	Fall Time			6
Reverse Device Characteristics
V_SD	Reverse Voltage	V_GS = 0 V, I_S = 5 A		1.5		V
V_SD	Reverse Voltage	V_GS = 0 V, I_S = 2 A		1.0		V
t_RR	Reverse Recovery Time	I_S = 3 A, V_DS= 400V, di/dt = 1000 A/ps		12		ns
Q_RR	Reverse Recovery Charge	I_S = 3 A, V_DS= 400V, di/dt = 1000 A/ps		40		nC

GaN HEMT Device 650V 9A 245mΩ 38W