Parameters/Test Conditions | Symbol | Limits | Units | |
|---|---|---|---|---|
Drain-Source Voltage | VDS | - 100 | V | |
Gate-Source Voltage | VGS | ±25 | V | |
Continuous Drain Current | TC = 25°C | ID | - 17 | A |
TC = 100°C | - 1 1 | |||
Pulsed Drain Current1 | IDM | -61 | ||
Avalanche Current | IAS | - 14 | ||
Avalanche Energy | L = 1mH | EAS | 98 | mJ |
Power Dissipation | TC = 25°C | PD | 62.5 | W |
TC = 100°C | 25 | |||
Junction & Storage Temperature Range | TJ, Tstg | -55 to 150 | °C | |
Thermal Resistance | Symbol | Typical | Maximum | Units |
|---|---|---|---|---|
Junction-to-Ambient | RΘJA | 50 | °C/W | |
Junction-to-Case | RΘJc | 2 |
1.Pulse width limited by maximum junction temperature.
Symbol | Parameter | Test Conditions | Limits | Units | ||
|---|---|---|---|---|---|---|
Min | Typ | Max | ||||
Static | ||||||
V(BR)DSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = -250uA | - 100 | V | ||
VGS(th) | Gate Threshold Voltage | VDS = VGS , ID = -250uA | - 1.3 | - 1.8 | -2.3 | |
IGSS | Gate-Body Leakage | VDS = 0V, VGS = ±25V | ±100 | nA | ||
IDSS | Zero Gate Voltage Drain Current | VDS = - 100V, VGS = 0V | - 1 | A | ||
IGSS+ | Gate to Source Leakage Current | VDS = -100V, VGS = 0V, TJ = 55°C | - 10 | |||
RDS(ON) | Drain-Source On-State Resistance1 | VGS = -4.5V, ID = -10A | 81 | 110 | mΩ | |
VGS = -10V, ID = -15A | 76 | 93 | ||||
gfs | Forward Transconductance1 | VDS = -5V, ID = -15A | 36 | S | ||
Dynamic | ||||||
Ciss | Input Capacitance | VGS =0V, VDS = -50V, f = 1MHz | 2456 | pF | ||
Coss | Output Capacitance | 112 | ||||
Crss | Reverse Transfer Capacitance | 73 | ||||
Rg | Gate Resistance | VGS =0V, VDS = 0V, f = 1MHz | 8 | Ω | ||
Qg | Total Gate Charge2 | VDS = -50, VGS = -10V, ID = -15A | 46 | nC | ||
Qgs | Gate-Source Charge2 | 6.9 | ||||
Qgd | Gate-Drain Charge2 | 10 | ||||
td(ON) | Turn-On Delay Time2 | VDS = -50V , ID ≌- 15A, VGS = - 10V, RGEN =6Ω | 9 | nS | ||
tr | Rise Time2 | 48 | ||||
td(OFF) | Turn-Off Delay Time2 | 123 | ||||
tf | Fall Time2 | 82 | ||||
Source-drain Diode Ratings and Characteristics (TJ=25℃) | ||||||
IS | Continuous Current | -17 | A | |||
VSD | Forward Voltage1 | IF = -15A, VGS = 0V | -1.2 | V | ||
tr | Reverse Recovery Time | IF = -15A, dlF/dt = 100A / uS | 36 | nS | ||
Qrr | Reverse Recovery Charge | 72 | nC | |||
1. Pulse test : Pulse Width ≤ 300 μsec, Duty Cycle ≤ 2%.
2. Independent of operating temperature.
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