N-channel E-mode FET Device-器件-透镜光纤,氮化镓外延片,第三代半导体材料-武汉市联映科技有限公司

Absolute Maximum Ratings（T_A=25°C Unless Otherwise Noted）

Parameters/Test Conditions		Symbol	Limits	Units
Drain-Source Voltage		V_DS	80	V
Gate-Source Voltage		V_GS	±20	V
Continuous Drain Current³	T_C = 25°C	I_D	50	A
Continuous Drain Current³	T_C= 100°C	I_D	31
Pulsed Drain Current¹		I_DM	90
Continuous Drain Current	T_A = 25 °C	I_D	10
Continuous Drain Current	T_A = 70 °C	I_D	8.7
Avalanche Current		I_AS	49
Avalanche Energy	L = 0.1mH	E_AS	120	mJ
Power Dissipation	T_C = 25 °C	P_D	50	W
Power Dissipation	T_C = 100 °C	P_D	20	W
Power Dissipation	T_A = 25 °C	P_D	2.3	W
Power Dissipation	T_A = 70 °C	P_D	1.5	W
Operating Junction & Storage Temperature Range		T_J , T_stg	-55 to 150	°C

Thermal Resistance Ratings

Thermal Resistance	Symbol	Typical	Maximum	Units
Junction-to-Ambient2	R_ΘJA		53	°C/W
Junction-to-Case	R_ΘJc		2.5	°C/W

1. Pulse width limited by maximum junction temperature.
2. The value of R_θJA is measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air environment with T_A =25°C.
3. Package limitation current is 50A.

Electrical Characteristics (T_J=25℃, Unless Otherwise Noted)

Symbol		Parameter	Test Conditions	Limits			Units
Symbol		Parameter	Test Conditions	Min	Typ	Max	Units
Static
V_(BR)DSS		Drain-Source Breakdown Voltage	V_GS = 0V, I_D = 250uA	80			V
V_GS(th)		Gate Threshold Voltage	V_DS = VGS , I_D = 250uA	2	3	4	V
I_GSS		Gate-Body Leakage	V_DS = 0V, V_GS = ±20V			±100	nA
I_DSS		Zero Gate Voltage Drain Current	V_DS = 64V, V_GS = 0V			1	A
I_DSS		Zero Gate Voltage Drain Current	V_DS = 60V, V_GS = 0V, T_J = 55°C			10	A
R_DS(ON)		Drain-Source On-State Resistance¹	V_GS= 7V, I_D = 10A		7.8	12	mΩ
R_DS(ON)		Drain-Source On-State Resistance¹	V_GS = 10V, I_D = 10A		7.2	9	mΩ
g_fs		Forward Transconductance¹	V_DS= 5V, I_D = 10A		57		S
Dynamic
C_iss		Input Capacitance	V_GS =0V, V_DS = 25V, f = 1MHz		2824		pF
C_oss		Output Capacitance			322
C_rss		Reverse Transfer Capacitance			178
R_g		Gate Resistance	V_GS =0V, V_DS = 0V, f = 1MHz		0.9		Ω
Q_g	V_GS = 10V	Total Gate Charge²	V_DS = 40, V_GS = -10V, I_D = 10A		53.2		nC
Q_g	V_GS = 7V	Total Gate Charge²			40.4
Q_gs		Gate-Source Charge²			13.5
Q_gd		Gate-Drain Charge²			17.8
t_d(ON)		Turn-On Delay Time²	V_DS = 40V, I_D ≌10A, V_GS = 10V, R_GEN = 6Ω		35		nS
t_r		Rise Time²			40
t_d(OFF)		Turn-Off Delay Time²			60
t_f		Fall Time²			40
Source-drain Diode Ratings and Characteristics (T_J=25℃)
I_S		Continuous Current3				38	A
V_SD		Forward Voltage1	I_F = 10A, V_GS = 0V			1.4	V
t_rr		Reverse Recovery Time	I_F = 10A, dl_F/dt = 100A / uS		34		nS
Q_rr		Reverse Recovery Charge	I_F = 10A, dl_F/dt = 100A / uS		37		nC

1. Pulse test : Pulse Width ≤ 300 μsec, Duty Cycle ≤ 2％.
2. Independent of operating temperature.
3. Package limitation current is 50A.

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N-channel E-mode FET Device 80V 50A 9mΩ 50W

Absolute Maximum Ratings（TA=25°C Unless Otherwise Noted）

Thermal Resistance Ratings

Electrical Characteristics (TJ=25℃, Unless Otherwise Noted)

N-channel E-mode FET Device
80V 50A 9mΩ 50W

Absolute Maximum Ratings（T_A=25°C Unless Otherwise Noted）

Electrical Characteristics (T_J=25℃, Unless Otherwise Noted)