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N-channel E-mode FET Device
80V 50A 9mΩ 50W

Absolute Maximum Ratings(TA=25°C  Unless Otherwise Noted)

Parameters/Test Conditions

Symbol

Limits

Units

Drain-Source Voltage

VDS

80

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current3

TC = 25°C

ID

50

A

T= 100°C

31

Pulsed Drain Current1

IDM

90

Continuous Drain Current

TA = 25 °C

ID

10

TA = 70 °C

8.7

Avalanche Current

IAS

49

Avalanche Energy

L = 0.1mH

EAS

120

mJ

Power Dissipation

TC = 25 °C

PD

50

W

TC = 100 °C

20

Power Dissipation

TA = 25 °C

PD

2.3

W

TA = 70 °C

1.5

Operating Junction & Storage Temperature Range

TJ , Tstg

-55 to 150

°C


Thermal Resistance Ratings

Thermal Resistance

Symbol

Typical

Maximum

Units

Junction-to-Ambient2

RΘJA


53

°C/W

Junction-to-Case

RΘJc


2.5

1. Pulse width limited by maximum junction temperature.
2. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
3. Package limitation current is 50A.


Electrical Characteristics (TJ=25℃, Unless Otherwise Noted)

Symbol

Parameter

Test Conditions

Limits

Units

Min

Typ

Max

Static

V(BR)DSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250uA

80



V

VGS(th)

Gate Threshold Voltage

VDS = VGS , ID = 250uA

2

3

4

IGSS

Gate-Body Leakage

VDS = 0V, VGS = ±20V



±100

nA

IDSS

Zero Gate Voltage Drain Current

VDS = 64V, VGS = 0V



1

A

VDS = 60V, VGS = 0V, TJ = 55°C



10

RDS(ON)

Drain-Source On-State Resistance1

VGS = 7V, ID = 10A


7.8

12

VGS = 10V, ID = 10A


7.2

9

gfs

Forward Transconductance1

VDS = 5V, ID = 10A


57


S

Dynamic

Ciss

Input Capacitance

VGS =0V, VDS = 25V, f = 1MHz


2824


pF

Coss

Output Capacitance


322


Crss

Reverse Transfer Capacitance


178


Rg

Gate Resistance

VGS =0V, VDS = 0V, f = 1MHz


0.9


Ω

Qg

VGS = 10V

Total Gate Charge2

VDS = 40, VGS = -10V, ID = 10A


53.2


nC

VGS = 7V


40.4


Qgs

Gate-Source Charge2


13.5


Qgd

Gate-Drain Charge2


17.8


td(ON)

Turn-On Delay Time2

VDS = 40V,

ID ≌10A, VGS = 10V, RGEN = 6Ω


35


nS

tr

Rise Time2


40


td(OFF)

Turn-Off Delay Time2


60


tf

Fall Time2


40


 Source-drain Diode Ratings and Characteristics (TJ=25℃)

IS

Continuous Current3




38

A

VSD

Forward Voltage1

IF = 10A, VGS = 0V



1.4

V

trr

Reverse Recovery Time

IF = 10A, dlF/dt = 100A / uS


34


nS

Qrr

Reverse Recovery Charge


37


nC

1. Pulse test : Pulse Width ≤ 300 μsec, Duty Cycle ≤ 2%.
2. Independent of operating temperature.
3. Package limitation current is 50A.

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