V_DSX

T_J = 25°C to 175°C

100

V

V_DGX

T_J = 25°C to 175°C, R_GS = 1MΩ

100

V

V_GSX

Continuous

±20

V

V_GDX

Transient

±30

V

P_D

Maximum power dissipation @T_C=25°C

830

W

T_J

Operating temperature

-55 to 175

°C

T_JM

175

°C

T_Stg

Storage temperature

-55 to 175

°C

T_CSOLD

Soldering peak temperature

260

°C

R_θJC

Junction-to-Case

0.18

°C/W

R_θCS

0.21

°C/W

Weight

TO-247

6

g

Forward Device Characteristics

BV_DSS

-

100

-

V

V_GS=-5V, I_DSS=250μA

V_GS(th)

-2

-4.5

V

V_DS=2V, I_D=4mA

R_DS(on)

-

-

64

mΩ

V_GS=0V, I_D=8A, T_J=25°C

I_DSS

-

5

μA

V_DS=100, V_GS=-5V, T_J=25°C

μA

-

250

-

V_DS=100V, V_GS=-5V, T_J=150°C

I_GSS

-

-

100

nA

V_DS=0V, V_GS=20V

-

-

-100

nA

V_DS=0V, V_GS=-20V

C_ISS

-

5700

-

pF

V_GS=-10V, V_DS=25V, f=1MHz

C_OSS

-

1980

-

pF

C_RSS

-

940

-

pF

Q_G

-

225

-

nC

V_DS=50V, V_GS=-5V to 5V, I_D=8A

Q_GS

-

22

-

Q_GD

-

126

-

t_D(on)

-

45

-

nS

V_DS=50V, V_GS=-5V to 5V, I_D=8A, R_G=3.3Ω

t_R

-

43

-

t_D(off)

-

340

-

t_F

-

70

-

Reverse Device Characteristics

V_SD

-

0.8

1.3

V

V_GS=-10V, I_S=16A, T_J=25°C

t_RR

-

205

-

ns

I_S=8A, V_GS=-10V, d_i/d_t=1000A/μs, V_DD=100V

Q_RR

-

880

-

nC