Diameter

6" (150mm)

-

-

Inch/mm

Poly-type

4H

-

-

Surface

(0001) Silicon face

-

-

Off orientation

4 degree-off

-

-

Conductivity

N-type

-

-

Dopant

Nitrogen

-

-

Carrier concentration

1E15 ~ 3E16/cm³

±12% ~ ±20%

±8%

cm^-3 

All Means, points

Epi Thickness

5μm ~ 30μm

±8% ~ ±10%

±6%

PDD

≤2.0 /cm²

-

≤0.3 /cm2

cm^-2

(THK 5μm ~ 30μm)

BPD 2mm yield

> 92%

-

-

Surface Defect

≦ 2%

-

-

cm²

Usable Area

≦ 90%

-

-

%

Step Bunching 

≦ 2.0

-

-

nm

Scratchies 

< 100 

-

-

mm 

Roughness (10μm x 10μm)

< 0.5 

-

-

nm

Backside contamination 

< 5% 

-

-

%

1

SiC n- doping layer

5 ~ 25

n-type

5x10¹⁵ ~  5x10¹⁶

2

SIC Substrate

-

n-type

-

1

SiC n- doping layer

20

n-type

8x10¹⁵

2

SIC Substrate

-

n-type

-

1

SiC n- doping layer

14 

n-type

5x10¹⁵

2

SIC Substrate

-

n-type

-