IGBT芯片

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IGBT芯片
(1200V 100A)

Maximum Ratings

Parameter

Legend

Value

Unit

Collector-emitter voltage, Tj=25℃

VCE

1200

V

DC collector current, limited by Tjmax

IC

100 1)

A

Pulsed collector current, tp limited by Tjmax

Ic,puls

300

A

Gate emitter voltage

VGE

±30

V

Operating junction and storage temperature

Tj, Tstg

-55 … +150

Short circuit data 1) 2) VGE=15 V, VCC=800 V, TJ=150 °C

tsc

40

us


Static Characteristics (tested on wafer), Tj=25℃

Parameter

Symbol

Conditions

Value

Unit

Min

Typ

Max

Collector-emitter breakdown voltage

V(BR)CES

VGE=0 V, IC=1 mA

1200

-

-

V

Collector-emitter saturation voltage

VCE(sat)

VGE=15 V, IC=20 mA

-

1.3

1.5

VGE=15 V, IC=50 mA

-

2.23)

2.53)

Gate-emitter threshold voltage

VGE(th)

IC=1 mA, VGE= VCE

4.0

5.0

7.0

Zero gate voltage collector current

ICES

VCE=1200 V, VGE= 0 V

-

-

10

uA

Gate-emitter leakage current

IGES

VCE=0 V, VGE= 20 V

-

-

80

nA

Integrated gate resistor

RGint


-

5

-


Electrical Characteristics (verified by design/ characterization)

Parameter

Symbol

Conditions

Value

Unit

Min

Typ

Max

Input capacitance

Ciss

VCE=25 V,

VGE=0 V, 

f=1 MHz

-

10000

-

pF

Output capacitance

Coss

-

500

-

Reverse transfer capacitance

Crss

-

200

-

Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die.
Notes:
1) Depending on thermal properties of assembly
2) Not subject to production test – verified by design/characterization
3) Data for chip packaged in power modules

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