Parameter | Legend | Value | Unit |
|---|---|---|---|
Collector-emitter voltage, Tj=25℃ | VCE | 1200 | V |
DC collector current, limited by Tjmax | IC | 150 1) | A |
Pulsed collector current, tp limited by Tjmax | Ic,puls | 450 | A |
Gate emitter voltage | VGE | ±30 | V |
Operating junction and storage temperature | Tj, Tstg | -55 … +150 | ℃ |
Short circuit data 1) 2) VGE=15 V, VCC=800 V, TJ=150 °C | tsc | 40 | us |
Parameter | Symbol | Conditions | Value | Unit | ||
|---|---|---|---|---|---|---|
Min | Typ | Max | ||||
Collector-emitter breakdown voltage | V(BR)CES | VGE=0 V, IC=1 mA | 1200 | - | - | V |
Collector-emitter saturation voltage | VCE(sat) | VGE=15 V, IC=20 mA | - | 1.4 | 1.5 | |
VGE=15 V, IC=50 mA | - | 2.43) | 2.73) | |||
Gate-emitter threshold voltage | VGE(th) | IC=1 mA, VGE= VCE | 4.0 | 5.0 | 7.0 | |
Zero gate voltage collector current | ICES | VCE=1200 V, VGE= 0 V | - | - | 10 | uA |
Gate-emitter leakage current | IGES | VCE=0 V, VGE= 20 V | - | - | 80 | nA |
Integrated gate resistor | RGint | - | 5 | - | Ω | |
Parameter | Symbol | Conditions | Value | Unit | ||
|---|---|---|---|---|---|---|
Min | Typ | Max | ||||
Input capacitance | Ciss | VCE=25 V, VGE=0 V, f=1 MHz | - | tba | - | pF |
Output capacitance | Coss | - | tba | - | ||
Reverse transfer capacitance | Crss | - | tba | - | ||
Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die.
Notes:
1) Depending on thermal properties of assembly
2) Not subject to production test – verified by design/characterization
3) Data for chip packaged in power modules
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