碳化硅芯片-碳化硅芯片-透镜光纤,氮化镓外延片,第三代半导体材料-武汉市联映科技有限公司

Symbol	Parameter	Conditions	Value	Unit
V_DSmax	Drain – Source Voltage	V_GS=0V, I_D=100μA	1200	V
V_GSmax	Gate – Source Voltage	Absolute maximum values	-8/+22
V_GSop	Gate – Source Voltage	Recommended operational values	-4/+18
I_D	Continuous Drain Current	V_GS=18V	115	A
I_D	Continuous Drain Current	V_GS=18V, T_C=100℃	76	A
I_D(pulse)	Pulsed Drain Current	Pulse width tp limited by T_Jmax	250	A
T_J, T_stg	Operating junction and Storage temperature		-55~175	℃
T_Proc	Maximum Processing Temperature		325	℃

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
B_VDSS	Drain to Source Breakdown	V_GS=0V, I_D =100μA	1200			V
V_GS(th)	Gate Threshold Voltage	V_DS=VGS, I_D=23.5mA	2.0	2.6	4.0
V_GS(th)	Gate Threshold Voltage	V_DS=VGS, I_D=23.5mA, T_J =175℃		1.8
I_DSS	Zero Gate Voltage Drain Current	V_DS=1200V, V_GS=0V		1	100	μA
I_GSSF	Gate-Body Leakage, Forward	V_GS=22V, V_DS=0V		10	250	nA
I_GSSR	Gate-Body Leakage, Reverse	V_GS=-8V, V_DS=0V		10	250	nA
R_DS(ON)	Drain Source Resistance	V_GS=18V, I_D=75A		16	21	mΩ
R_DS(ON)	Drain Source Resistance	V_GS=18V, I_D=75A, T_J=175℃		28		mΩ
g_fs	Transconductance	V_DS=20V, I_D=75A		40.5		S
g_fs	Transconductance	V_DS=20V, I_D=75A, T_J =175℃		37		S
Q_GS	Gate to Source Charge	V_DS=800V V_GS=-4V/18V I_D=20A		60		nC
Q_GD	Gate to Drain Charge			44
Q_G	Total Gate Charge			242

Symbol	Parameter	Conditions	Typ	Max	Unit
V_SD	Diode Forward Voltage	V_GS=-4V, I_SD=37.5A,	3.9		V
V_SD	Diode Forward Voltage	V_GS=-4V, I_SD=37.5A, T_J=175℃	3.6		V
I_S	Continuous Diode Forward Current			115	μA
t_rr	Reverse Recover Time	V_R=800V, I_SD=75A	54		ns
Q_rr	Reverse Recovery Charge		630		nC
I_rrm	Peak Reverse Recovery Current		19		A

碳化硅芯片 SiC MOSFET (1200V 16mΩ 115A)