碳化硅芯片-碳化硅芯片-透镜光纤,氮化镓外延片,第三代半导体材料-武汉市联映科技有限公司

Symbol	Parameter	Value	Unit
V_DSma_x	Drain – Source Voltage	1200	V
V_GSmax	Gate – Source Voltage (Absolute maximum values)	-10/+25	V
V_GSop	Gate – Source Voltage (Recommended operational values)	-5/+20	V
I_D	Continuous Drain Current, T_C=25℃	52	A
I_D(pulse)	Pulsed Drain Current	155	A
T_J, T_stg	Operating junction and Storage temperature	-55~175	℃

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
BV_DSS	Drain to Source Breakdown	V_GS=0V, I_D =100μA	1200			V
V_GS(th)	Gate Threshold Voltage	V_DS=V_GS, I_D=10mA	2.0	3.0	4.0	V
I_DSS	Zero Gate Voltage Drain Current	V_DS=1200V,V_G_S=0V		1	100	μA
I_GSSF	Gate-Body Leakage, Forward	V_GS=20V, V_DS=0V		1	100	nA
R_DS(ON)	Drain Source Resistance	V_GS=20V, I_D=40A		40	59	mΩ

碳化硅芯片 SiC MOSFET (1200V 40mΩ 60A)